Subject: 4H-SiC -- SiO2 -- Interface -- STEM -- Molecular dynamics calculation - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Subject 4H-SiC -- SiO2 -- Interface -- STEM -- Molecular dynamics calculation

1. Oxygen atom ordering on SiO2/4H-SiC {0001} polar interfaces formed by wet oxidation. (December 2021)

Authors:: Saito, Mitsuhiro; Li, Hongping; Inoue, Kazutoshi; Matsuhata, Hirofumi; Ikuhara, Yuichi
Journal:: Acta materialia
Issue:: Volume 221(2021)
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Record Type:: Journal Article
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