1. Approaches to design inorganic semiconductors while maintaining structural motifs *Project supported by the National Natural Science Foundations of China (No. 11774239), the Natural Science Foundation of SZU (No. 827-000242), the High-End Researcher Startup Funds of SZU (No. 848-0000040251), and the Supporting Funds from Guangdong Province for 1000 Talents Plan (No. 85639-000005). (July 2018) Authors: Zhang, Xiuwen; Xia, Jianbai Journal: Journal of semiconductors Issue: Volume 39:Number 7(2018:Jul.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. First-principle high-throughput calculations of carrier effective masses of two-dimensional transition metal dichalcogenides *Project supported by the National Natural Science Foundation of China (Nos. 11404131, 11674121), the Program for JLU Science and Technology Innovative Research Team, and the Special Fund for Talent Exploitation in Jilin Province of China. (July 2018) Authors: Sun, Yuanhui; Wang, Xinjiang; Zhao, Xin-Gang; Shi, Zhiming; Zhang, Lijun Journal: Journal of semiconductors Issue: Volume 39:Number 7(2018:Jul.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. MWCNTs based flexible and stretchable strain sensors *Project supported by the National Basic Research Program of China (No. 2015CB351905), the National Natural Science Foundation of China (No. 61306015), the Technology Innovative Research Team of Sichuan Province of China (No.2015TD0005), and "111" Project (No. B13042). (June 2017) Authors: Khan, Saeed Ahmed; Gao, Min; Zhu, Yuechang; Yan, Zhuocheng; Lin, Yuan Journal: Journal of semiconductors Issue: Volume 38:Number 5(2017:May) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗