1. Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress. (September 2016) Authors: Lakhdhar, H.; Labat, N.; Curutchet, A.; Defrance, N.; Lesecq, M.; De Jaeger, J.-C.; Malbert, N. Journal: Microelectronics and reliability Issue: Volume 64(2016) Page Start: 594 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress. (September 2016) Authors: Lakhdhar, H.; Labat, N.; Curutchet, A.; Defrance, N.; Lesecq, M.; De Jaeger, J.-C.; Malbert, N. Journal: Microelectronics and reliability Issue: Volume 64(2016) Page Start: 594 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗