Journal: Microelectronics journal - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Journal Microelectronics journal

1231. Improving the performance of SRAMs using asymmetric junctionless accumulation mode (JAM) FinFETs. (December 2016)

Authors:: Saini, Gaurav; Choudhary, Sudhanshu
Journal:: Microelectronics journal
Issue:: Volume 58(2016)
Page Start:: 1
Record Type:: Journal Article
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1232. Improving the subthreshold performance of junctionless transistor using spacer engineering. (January 2017)

Authors:: Saini, Gaurav; Choudhary, Sudhanshu
Journal:: Microelectronics journal
Issue:: Volume 59(2016)
Page Start:: 55
Record Type:: Journal Article
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1233. Improving uniformity and reliability of SRAM PUFs utilizing device aging phenomenon for unique identifier generation. (August 2019)

Authors:: Garg, Achiranshu; Lee, Zhao Chuan; Lu, Lu; Kim, Tony Tae-Hyoung
Journal:: Microelectronics journal
Issue:: Volume 90(2019)
Page Start:: 29
Record Type:: Journal Article
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1234. In-depth circuits edit analysis to reveal the implantation-related defect. (April 2017)

Authors:: Chen, C.Q.; Ang, G.B.; Lam, Jeffrey; Mai, Z.H.
Journal:: Microelectronics journal
Issue:: Volume 62(2017)
Page Start:: 38
Record Type:: Journal Article
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1235. In-situ characterization up to 100 GHz of insulators used in new 3D "System in Package on board" (SiPoB) technologies. (February 2021)

Authors:: Houzet, Gregory; Lacrevaz, Thierry; Bermond, Cedric; Artillan, Philippe; Auchère, David; Schwarz, Laurent; Flechet, Bernard
Journal:: Microelectronics journal
Issue:: Volume 108(2021)
Page Start:
Record Type:: Journal Article
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1236. Independently tunable plus-type DDCC-based voltage-mode universal biquad filter with MISO and SIMO types. (September 2017)

Authors:: Lee, Chen-Nong
Journal:: Microelectronics journal
Issue:: Volume 67(2017)
Page Start:: 71
Record Type:: Journal Article
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1237. Inductive noise coupling in multilayer superconductive ICs. (August 2022)

Authors:: Krylov, Gleb; Friedman, Eby G.
Journal:: Microelectronics journal
Issue:: Volume 126(2022)
Page Start:
Record Type:: Journal Article
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1238. Influence of gate and channel engineering on multigate MOSFETs-A review. (August 2017)

Authors:: Ramesh, R.
Journal:: Microelectronics journal
Issue:: Volume 66(2017)
Page Start:: 136
Record Type:: Journal Article
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1239. Influence of the ZrO2 gate dielectric layer on polarization coulomb field scattering in InAlN/GaN metal–insulator–semiconductor high-electron -mobility transistors. (November 2022)

Authors:: Jiang, Guangyuan; Cui, Peng; Zhang, Guangyuan; Zeng, Yuping; Yang, Guang; Fu, Chen; Lin, Zhaojun; Wang, Mingyan; Zhou, Heng
Journal:: Microelectronics journal
Issue:: Volume 129(2022)
Page Start:
Record Type:: Journal Article
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1240. Influence of tunneling barrier width on the forward current characteristics of InAs-based microwave p–n diode. Issue 12 (December 2015)

Authors:: Yang, Chih Chin; Su, Yan Kuin; Lin, Hao Hsiung
Journal:: Microelectronics journal
Issue:: Volume 46:Issue 12 Part B (2015)
Page Start:: 1392
Record Type:: Journal Article
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