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11. High Power Figure‐of‐Merit, 10.6‐kV AlGaN/GaN Lateral Schottky Barrier Diode with Single Channel and Sub‐100‐µm Anode‐to‐Cathode Spacing (Small 37/2022). Issue 37 (15th September 2022)

12. High Power Figure‐of‐Merit, 10.6‐kV AlGaN/GaN Lateral Schottky Barrier Diode with Single Channel and Sub‐100‐µm Anode‐to‐Cathode Spacing. Issue 37 (22nd July 2022)

15. In Situ Reconstructed Zn doped FexNi(1−x)OOH Catalyst for Efficient and Ultrastable Oxygen Evolution Reaction at High Current Densities. Issue 37 (12th August 2022)