1. Highly Stable Ultrathin TiO2 Based Resistive Random Access Memory with Low Operation Voltage. (15th May 2018) Authors: Chen, Shi-Xiang; Chang, Sheng-Po; Chang, Shoou-Jinn; Hsieh, Wei-Kang; Lin, Cheng-Han Journal: ECS journal of solid state science and technology Issue: Volume 7:Number 7(2018) Page Start: Q3183 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Highly Stable Ultrathin TiO2 Based Resistive Random Access Memory with Low Operation Voltage. (1st January 2018) Authors: Chen, Shi-Xiang; Chang, Sheng-Po; Chang, Shoou-Jinn; Hsieh, Wei-Kang; Lin, Cheng-Han Journal: ECS journal of solid state science and technology Issue: Volume 7:Number 7(2018) Page Start: Q3183 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗