1. A novel enhancement-mode GaN vertical MOSFET with double hetero-junction for threshold voltage modulation. (November 2018) Authors: Zhou, Qi; Wei, Dong; Peng, Xin; Zhu, Ruopu; Dong, Changxu; Huang, Peng; Wei, Pengcheng; Xiong, Wei; Ma, Xiaoyong; Dong, Zhiwen; Yang, Xiu; Chen, Wanjun; Zhang, Bo Journal: Superlattices and microstructures Issue: Volume 123(2018) Page Start: 297 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Enhancement-mode AlGaN/GaN HFET with buried-junction-barrier for breakdown improvement and threshold-voltage modulation. (October 2018) Authors: Zhou, Qi; Wei, Dong; Zhu, Ruopu; Dong, Changxu; Huang, Peng; Zhang, Anbang; Shi, Yuanyuan; Zhu, Liyang; Shi, Yu; Cheng, Qian; Deng, Cao; Chen, Wanjun; Zhang, Bo Journal: Superlattices and microstructures Issue: Volume 122(2018) Page Start: 85 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗