1. A novel 3300 V trench IGBT with P-N-doped polysilicon split gate for low EMI noise. (1st April 2022) Authors: Wang, Tongyang; Li, Zehong; Zhao, Yishang; Li, Luping; Yang, Yang; Xia, Ziming; Ren, Min; Li, Wei; Zhang, Jinping Journal: Semiconductor science and technology Issue: Volume 37:Number 4(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. High voltage carrier stored trench bipolar transistor with common anode polysilicon diodes gate structure for low Miller capacitance and low electromagnetic interference noise. (16th April 2021) Authors: Zhao, Yishang; Li, Zehong; Hu, Wenjin; Yang, Yang; Zeng, Xiao; Li, Luping; Guo, Qiao; Yuan, Qiang; Ren, Min; Zhang, Bo Journal: Semiconductor science and technology Issue: Volume 36:Number 5(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. High voltage trench insulated gate bipolar transistor with MOS structure for self-adjustable hole extraction. (29th September 2020) Authors: Zhao, Yishang; Li, Zehong; Peng, Xin; Yang, Yang; Zeng, Xiao; Ren, Min; Zhang, Jinping; Gao, Wei; Zhang, Bo Journal: Semiconductor science and technology Issue: Volume 35:Number 11(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗