1. Performance improvement of charge‐trap memory by using a stacked Zr0.46Si0.54O2/Al2O3 charge‐trapping layer. Issue 11 (6th July 2016) Authors: Tang, Zhenjie; Li, Rong; Hu, Dan; Zhang, Xiwei; Zhao, Yage Journal: Physica status solidi Issue: Volume 213:Issue 11(2016:Nov.) Page Start: 3033 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗