1. A novel 3.3 kV 4H-SiC trench PiN with enhanced conductance modulation effect. (1st July 2022) Authors: Zhang, Yourun; Ou, Yanggang; Luo, Jiamin; Wang, Shuai; Zhang, Bo; Niu, Yingxi Journal: Semiconductor science and technology Issue: Volume 37:Number 7(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. A robust and area-efficient guard ring edge termination technique for 4H-SiC power MOSFETs. (September 2017) Authors: Deng, Xiaochuan; Guo, Yuanxu; Dai, Tianxiang; Li, Chengzhan; Chen, Ximing; Chen, Wanjun; Zhang, Yourun; Zhang, Bo Journal: Materials science in semiconductor processing Issue: Volume 68(2017) Page Start: 108 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Design, fabrication and characterization of mesa combined with JTE termination for high-voltage 4H–SiC PiN diodes. (December 2015) Authors: Deng, Xiaochuan; Xiao, Han; Wu, Jia; Shen, Huajun; Li, Chengzhan; Tang, Yachao; Zhang, Yourun; Zhang, Bo Journal: Superlattices and microstructures Issue: Volume 88(2015) Page Start: 167 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Safe Operation of Maximum Temperature for Planar Gate SiC Mosfet under Avalanche Stress Shock. (3rd July 2019) Authors: Li, Xuan; Hou, Zijie; Tong, Xing; Deng, Xiaochuan; Zhang, Yourun; Zhang, Bo Journal: ECS transactions Issue: Volume 92:Number 7(2019) Page Start: 49 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Silicon carbide bipolar junction transistor with novel emitter field plate design for high current gain and reliability. (28th February 2019) Authors: Zhang, Yourun; Chen, Hang; Luo, Maojiu; Li, Juntao; Wang, Wen; Deng, Xiaochuan; Bai, Yun; Chen, Hong; Zhang, Bo Journal: Semiconductor science and technology Issue: Volume 34:Number 4(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗