1. Investigations of the gate instability characteristics in Schottky/ohmic type p-GaN gate normally-off AlGaN/GaN HEMTs. (13th November 2019) Authors: Zeng, Changkun; Xu, Weizong; Xia, Yuanyang; Pan, Danfeng; Wang, Yiwang; Wang, Qiang; Zhu, Youhua; Ren, Fangfang; Zhou, Dong; Ye, Jiandong; Chen, Dunjun; Zhang, Rong; Zheng, Youdou; Lu, Hai Journal: Applied physics express Issue: Volume 12:Number 12(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Normally-off GaN HEMTs with InGaN p-gate cap layer formed by polarization doping. (17th December 2021) Authors: Zeng, Changkun; Xu, Weizong; Xia, Yuanyang; Wang, Ke; Ren, Fangfang; Zhou, Dong; Li, Yiheng; Zhu, Tinggang; Chen, Dunjun; Zhang, Rong; Zheng, Youdou; Lu, Hai Journal: Applied physics express Issue: Volume 15:Number 1(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗