1. Dynamic SIMS, spectroscopic ellipsometry and x-ray diffractometry analysis of SiGe HBTs with Ge grading. (14th December 2018) Authors: Bärwolf, F; Fursenko, O; Zaumseil, P; Yamamoto, Y Journal: Semiconductor science and technology Issue: Volume 34:Number 1(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Dynamic SIMS, spectroscopic ellipsometry and x-ray diffractometry analysis of SiGe HBTs with Ge grading. (14th December 2018) Authors: Bärwolf, F; Fursenko, O; Zaumseil, P; Yamamoto, Y Journal: Semiconductor science and technology Issue: Volume 34:Number 1(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Electron holography on HfO2/HfO2−x bilayer structures with multilevel resistive switching properties. (2nd May 2017) Authors: Niu, G; Schubert, M A; Sharath, S U; Zaumseil, P; Vogel, S; Wenger, C; Hildebrandt, E; Bhupathi, S; Perez, E; Alff, L; Lehmann, M; Schroeder, T; Niermann, T Journal: Nanotechnology Issue: Volume 28:Number 21(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Tailoring the strain in Si nano-structures for defect-free epitaxial Ge over growth. (12th August 2015) Authors: Zaumseil, P; Yamamoto, Y; Schubert, M A; Capellini, G; Skibitzki, O; Zoellner, M H; Schroeder, T Journal: Nanotechnology Issue: Volume 26:Number 35(2015) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Tailoring the strain in Si nano-structures for defect-free epitaxial Ge over growth. (4th September 2015) Authors: Zaumseil, P; Yamamoto, Y; Schubert, M A; Capellini, G; Skibitzki, O; Zoellner, M H; Schroeder, T Journal: Nanotechnology Issue: Volume 26:Number 35(2015) Page Start: 757 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Ternary and quaternary Ni(Si)Ge(Sn) contact formation for highly strained Ge p- and n-MOSFETs. (31st March 2015) Authors: Wirths, S; Troitsch, R; Mussler, G; Hartmann, J-M; Zaumseil, P; Schroeder, T; Mantl, S; Buca, D Journal: Semiconductor science and technology Issue: Volume 30:Number 5(2015:May) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗