1. On the turn-around phenomenon in n-MOS transistors under NBTI conditions. (July 2016) Authors: Benabdelmoumene, A.; Djezzar, B.; Chenouf, A.; Tahi, H.; Zatout, B.; Kechouane, M. Journal: Solid-state electronics Issue: Volume 121(2016) Page Start: 34 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. On the turn-around phenomenon in n-MOS transistors under NBTI conditions. (July 2016) Authors: Benabdelmoumene, A.; Djezzar, B.; Chenouf, A.; Tahi, H.; Zatout, B.; Kechouane, M. Journal: Solid-state electronics Issue: Volume 121(2016) Page Start: 34 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗