1. Influence of composition of Hg1−xCdxTe (x = 0.22–0.57) epitaxial film on dynamics of accumulation and spatial distribution of electrically active radiation defects after boron implantation. (17th April 2019) Authors: Voitsekhovskii, A V; Grigoryev, D V; Korotaev, A G; Kokhanenko, A P; Lozovoy, K A; Izhnin, I I; Savytskyy, H V; Yu Bonchyk, O; Dvoretsky, S A; Mikhailov, N N; Varavin, V S; Yakushev, M V Journal: Materials research express Issue: Volume 6:Number 7(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗