1. A novel physical unclonable function (PUF) using 16 × 16 pure-HfOx ferroelectric tunnel junction array for security applications. (7th September 2021) Authors: Yu, Junsu; Min, Kyung Kyu; Kim, Yeonwoo; Kim, Sihyun; Hwang, Sungmin; Kim, Tae-Hyeon; Kim, Changha; Kim, Hyungjin; Lee, Jong-Ho; Kwon, Daewoong; Park, Byung-Gook Journal: Nanotechnology Issue: Volume 32:Number 48(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Comprehensive and accurate analysis of the working principle in ferroelectric tunnel junctions using low-frequency noise spectroscopy. Issue 6 (6th January 2022) Authors: Shin, Wonjun; Min, Kyung Kyu; Bae, Jong-Ho; Yim, Jiyong; Kwon, Dongseok; Kim, Yeonwoo; Yu, Junsu; Hwang, Joon; Park, Byung-Gook; Kwon, Daewoong; Lee, Jong-Ho Journal: Nanoscale Issue: Volume 14:Issue 6(2022) Page Start: 2177 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Interlayer engineering for enhanced ferroelectric tunnel junction operations in HfOx-based metal-ferroelectric-insulator-semiconductor stack. (16th September 2021) Authors: Min, Kyung Kyu; Yu, Junsu; Kim, Yeonwoo; Lee, Jong-Ho; Kwon, Daewoong; Park, Byung-Gook Journal: Nanotechnology Issue: Volume 32:Number 49(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Lamination method for improved polarization-leakage current relation in HfO2-based metal/ferroelectric/insulator/semiconductor structure. (1st April 2022) Authors: Kim, Yeonwoo; Min, Kyung Kyu; Yu, Junsu; Kwon, Daewoong; Park, Byung-Gook Journal: Semiconductor science and technology Issue: Volume 37:Number 4(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗