1. (Invited) Epitaxial Lift-Off of GaN and Related Materials for Device Applications. (3rd July 2019) Authors: Fay, Patrick; Wang, Jingshan; Cao, Lina; Xie, J; Beam, Edward; McCarthy, Robert; Reddy, Rekha; Youtsey, Chris Journal: ECS transactions Issue: Volume 92:Number 4(2019) Page Start: 97 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. (Invited) Fabrication and Applications of High-Efficiency, Lightweight, Multi-Junction Solar Cells by Epitaxial Liftoff. (10th April 2015) Authors: Elarde, Victor Christopher; Miyamoto, Haruki; Chan, Ray; Stender, Chris; Youtsey, Chris; Adams, Jessica G J; Wibowo, Andree; Tatavarti, Rao; Osowski, Mark; Pan, Noren Journal: ECS transactions Issue: Volume 66:Number 7(2015) Page Start: 89 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Ion‐Implant Isolated Vertical GaN p‐n Diodes Fabricated with Epitaxial Lift‐Off From GaN Substrates (Phys. Status Solidi A 4∕2019). Issue 4 (19th February 2019) Authors: Wang, Jingshan; McCarthy, Robert; Youtsey, Chris; Reddy, Rekha; Xie, Jinqiao; Beam, Edward; Guido, Louis; Cao, Lina; Fay, Patrick Journal: Physica status solidi Issue: Volume 216:Issue 4(2019) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Ion‐Implant Isolated Vertical GaN p‐n Diodes Fabricated with Epitaxial Lift‐Off From GaN Substrates. Issue 4 (18th December 2018) Authors: Wang, Jingshan; McCarthy, Robert; Youtsey, Chris; Reddy, Rekha; Xie, Jinqiao; Beam, Edward; Guido, Louis; Cao, Lina; Fay, Patrick Journal: Physica status solidi Issue: Volume 216:Issue 4(2019) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Wafer‐scale epitaxial lift‐off of GaN using bandgap‐selective photoenhanced wet etching (Phys. Status Solidi B 8/2017). Issue 8 (8th August 2017) Authors: Youtsey, Chris; McCarthy, Robert; Reddy, Rekha; Forghani, Kamran; Xie, Andy; Beam, Ed; Wang, Jingshan; Fay, Patrick; Ciarkowski, Timothy; Carlson, Eric; Guido, Louis Journal: Physica status solidi Issue: Volume 254:Issue 8(2017) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Wafer‐scale epitaxial lift‐off of GaN using bandgap‐selective photoenhanced wet etching (Phys. Status Solidi B 8/2017). Issue 8 (August 2017) Authors: Youtsey, Chris; McCarthy, Robert; Reddy, Rekha; Forghani, Kamran; Xie, Andy; Beam, Ed; Wang, Jingshan; Fay, Patrick; Ciarkowski, Timothy; Carlson, Eric; Guido, Louis Journal: Physica status solidi Issue: Volume 254:Issue 8(2017) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Wafer‐scale epitaxial lift‐off of GaN using bandgap‐selective photoenhanced wet etching. Issue 8 (27th April 2017) Authors: Youtsey, Chris; McCarthy, Robert; Reddy, Rekha; Forghani, Kamran; Xie, Andy; Beam, Ed; Wang, Jingshan; Fay, Patrick; Ciarkowski, Timothy; Carlson, Eric; Guido, Louis Journal: Physica status solidi Issue: Volume 254:Issue 8(2017) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗