1. (Invited) Evaluation of Few-Layer MoS2 Transistors with a Top Gate and HfO2 Dielectric. (19th August 2016) Authors: Young, Chadwin D; Zhao, Peng; Bolshakov-Barrett, Pavel; Azcatl, Angelica; Hurley, P. K.; Gomeniuk, Y. Y.; Schmidt, Michael; Hinkle, Christopher L; Wallace, Robert M Journal: ECS transactions Issue: Volume 75:Number 5(2016) Page Start: 153 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. (Invited) Investigation of Critical Interfaces in Few-Layer MoS2 Field Effect Transistors with High-k Dielectrics. (16th August 2017) Authors: Young, Chadwin D; Bolshakov, P.; Zhao, P.; Smyth, C.; Khosravi, A.; Hurley, P. K.; Hinkle, Christopher L; Wallace, Robert M Journal: ECS transactions Issue: Volume 80:Number 1(2017) Page Start: 219 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Relatively Low-Temperature Processing and Its Impact on Device Performance and Reliability. (30th April 2019) Authors: Young, Chadwin D; Bolshakov, Pavel; Rodriguez Davila, Rodolfo A; Zhao, Peng; Smyth, C.; Quevedo-Lopez, M; Wallace, Robert M Journal: ECS transactions Issue: Volume 90:Number 1(2019) Page Start: 89 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Wafer Scale Graphene Field Effect Transistors on Thin Thermal Oxide. (20th July 2018) Authors: Ravichandran, Arul Vigneswar; Lee, Jaebeom; Cheng, Lanxia; Lucero, Antonio Tomas; Young, Chadwin D; Colombo, Luigi; Venugopal, Archana; Polley, Arup; Kim, Jiyoung Journal: ECS transactions Issue: Volume 86:Number 2(2018) Page Start: 51 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗