11. Macrodefect-free, large, and thick GaN bulk crystals for high-quality 2–6 in. GaN substrates by hydride vapor phase epitaxy with hardness control. (8th May 2018) Authors: Fujikura, Hajime; Konno, Taichiro; Suzuki, Takayuki; Kitamura, Toshio; Fujimoto, Tetsuji; Yoshida, Takehiro Journal: Japanese journal of applied physics Issue: Volume 57:Number 6(2018) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
12. Mapping of photo-electrochemical etched Ni/GaN Schottky contacts using scanning internal photoemission microscopy—comparison between n- and p-type GaN samples. (15th February 2021) Authors: Matsuda, Ryo; Horikiri, Fumimasa; Narita, Yoshinobu; Yoshida, Takehiro; Fukuhara, Noboru; Mishima, Tomoyoshi; Shiojima, Kenji Journal: Japanese journal of applied physics Issue: Volume 60:Number SB(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
13. Nondestructive measurement of homoepitaxially grown GaN film thickness with Fourier transform infrared spectroscopy. (27th October 2017) Authors: Horikiri, Fumimasa; Narita, Yoshinobu; Yoshida, Takehiro Journal: Japanese journal of applied physics Issue: Volume 56:Number 12(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
14. Removal of small parasite peaks in powder diffraction data by a multiple deconvolution method. Issue 2 (29th June 2018) Authors: Ida, Takashi; Ono, Shoki; Hattan, Daiki; Yoshida, Takehiro; Takatsu, Yoshinobu; Nomura, Katsuhiro Journal: Powder diffraction Issue: Volume 33:Issue 2(2018) Page Start: 108 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
15. Roles of carbon impurities and intrinsic nonradiative recombination centers on the carrier recombination processes of GaN crystals. (4th December 2019) Authors: Kojima, Kazunobu; Horikiri, Fumimasa; Narita, Yoshinobu; Yoshida, Takehiro; Fujikura, Hajime; Chichibu, Shigefusa F. Journal: Applied physics express Issue: Volume 13:Number 1(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
16. Simple wet-etching technology for GaN using an electrodeless photo-assisted electrochemical reaction with a luminous array film as the UV source. (20th February 2019) Authors: Horikiri, Fumimasa; Fukuhara, Noboru; Ohta, Hiroshi; Asai, Naomi; Narita, Yoshinobu; Yoshida, Takehiro; Mishima, Tomoyoshi; Toguchi, Masachika; Miwa, Kazuki; Sato, Taketomo Journal: Applied physics express Issue: Volume 12:Number 3(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
17. Thermal-assisted contactless photoelectrochemical etching for GaN. (18th March 2020) Authors: Horikiri, Fumimasa; Fukuhara, Noboru; Ohta, Hiroshi; Asai, Naomi; Narita, Yoshinobu; Yoshida, Takehiro; Mishima, Tomoyoshi; Toguchi, Masachika; Miwa, Kazuki; Ogami, Hiroki; Sato, Taketomo Journal: Applied physics express Issue: Volume 13:Number 4(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
18. Wafer-level nondestructive inspection of substrate off-angle and net donor concentration of the n−-drift layer in vertical GaN-on-GaN Schottky diodes. (11th May 2017) Authors: Horikiri, Fumimasa; Narita, Yoshinobu; Yoshida, Takehiro; Kitamura, Toshio; Ohta, Hiroshi; Nakamura, Tohru; Mishima, Tomoyoshi Journal: Japanese journal of applied physics Issue: Volume 56:Number 6(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗