1. Characterization of interface properties of Al2O3/n-GaSb and Al2O3/InAs/n-GaSb metal-oxide-semiconductor structures. (1st June 2022) Authors: Yokoyama, Masafumi; Yokoyama, Haruki; Takenaka, Mitsuru; Takagi, Shinichi Journal: Japanese journal of applied physics Issue: Volume 61:Number 6(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Composition and doping control for metal–organic chemical vapor deposition of InP-based double heterojunction bipolar transistor with hybrid base structure consisting of GaAsSb contact and InGaAsSb graded layers. (19th June 2017) Authors: Hoshi, Takuya; Kashio, Norihide; Sugiyama, Hiroki; Yokoyama, Haruki; Kurishima, Kenji; Ida, Minoru; Matsuzaki, Hideaki Journal: Japanese journal of applied physics Issue: Volume 56:Number 7(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗