1. A comprehensive study on the oxidation of 4H-SiC in diluted N2O ambient. (26th January 2017) Authors: Tseng, Yuan-Hung; Wu, Tsung-Han; Tsui, Bing-Yue; Yen, Cheng-Tyng; Hung, Chien-Chung; Lee, Chwan-Ying Journal: Japanese journal of applied physics Issue: Volume 56:Number 4(2017)Supplement Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Influence of displacement damage induced by neutron irradiation on effective carrier density in 4H-SiC SBDs and MOSFETs. (25th February 2019) Authors: Chao, Der-Sheng; Shih, Hua-Yu; Jiang, Jheng-Yi; Huang, Chih-Fang; Chiang, Ching-Yu; Ku, Ching-Shun; Yen, Cheng-Tyng; Lee, Lurng-Sheng; Hsu, Fu-Jen; Chu, Kuo-Ting; Hung, Chien-Chung; Lee, Chwan-Ying Journal: Japanese journal of applied physics Issue: Volume 58:Number SB(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Strong Fermi-level pinning induced by argon inductively coupled plasma treatment and post-metal deposition annealing on 4H-SiC. (July 2017) Authors: Tsui, Bing-Yue; Cheng, Jung-Chien; Yen, Cheng-Tyng; Lee, Chawn-Ying Journal: Solid-state electronics Issue: Volume 133(2017) Page Start: 83 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗