1. Characterization of peripheries of n-GaN Schottky contacts using scanning internal photoemission microscopy. (1st January 2023) Authors: Imabayashi, Hiroki; Yasui, Yuto; Horikiri, Fumimasa; Narita, Yoshinobu; Fukuhara, Noboru; Mishima, Tomoyoshi; Shiojima, Kenji Journal: Japanese journal of applied physics Issue: Volume 62:Number SA(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Estimation of uniformity in Schottky contacts between printed Ni electrode and n-GaN by scanning internal photoemission microscopy. (1st August 2022) Authors: Shiojima, Kenji; Kawasumi, Yuto; Yasui, Yuto; Kashiwagi, Yukiyasu; Tamai, Toshiyuki Journal: Japanese journal of applied physics Issue: Volume 61:Number 8(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗