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1. Analysis of Spontaneous Subpeak Emission from the Guide Layers of the Ultraviolet‐B Laser Diode Structure Containing Composition‐Graded p‐AlGaN Cladding Layers. Issue 14 (24th January 2020)

2. Effect of dislocation density on optical gain and internal loss of AlGaN-based ultraviolet-B band lasers. (31st March 2020)

3. Internal loss of AlGaN-based ultraviolet-B band laser diodes with p-type AlGaN cladding layer using polarization doping. (29th June 2020)

4. The dependence of AlN molar fraction of AlGaN in wet etching by using tetramethylammonium hydroxide aqueous solution. (23rd May 2019)

5. Ultraviolet-B band lasers fabricated on highly relaxed thick Al0.55Ga0.45N films grown on various types of AlN wafers. (22nd May 2019)

6. Ultraviolet-B band lasers fabricated on highly relaxed thick Al0.55Ga0.45N films grown on various types of AlN wafers. (22nd May 2019)