1. Reduction of interface traps between poly-Si and SiO2 layers through the dielectric recovery effect during delayed pulse bias stress. (10th May 2017) Authors: Lee, Dong Uk; Pak, Sangwoo; Lee, Daemyoung; Kim, Yihun; Yang, Haechang; Hong, Sanghoo; Lee, Seungjun; Kim, Eun Kyu Journal: Nanotechnology Issue: Volume 28:Number 22(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗