1. Properties of the structural defects during SiC–crystal–induced crystallization on the solid–liquid interface. (September 2020) Authors: Gao, Yue; Yan, Wanjun; Gao, Tinghong; Chen, Qian; Yang, Wensheng; Xie, Quan; Tian, Zean; Liang, Yongchao; Luo, Jun; Li, Lianxin Journal: Materials science in semiconductor processing Issue: Volume 116(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗