Author/Creator: Yan, Gangping - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Yan, Gangping

1. Accumulative total ionizing dose (TID) and transient dose rate (TDR) effects on planar and vertical ferroelectric tunneling-field-effect-transistors (TFET). (November 2020)

Authors:: Yan, Gangping; Xu, Gaobo; Bi, Jinshun; Tian, Guoliang; Xu, Qiuxia; Yin, Huaxiang; Li, Yongliang
Journal:: Microelectronics and reliability
Issue:: Volume 114(2020)
Page Start:
Record Type:: Journal Article
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2. Improved Ferroelectricity and Endurance of Hf0.5Zr0.5O2 Thin Films in Low Thermal Budget with Novel Bottom Electrode Doping Technology. Issue 24 (28th July 2022)

Authors:: Tian, Guoliang; Xu, Gaobo; Yin, Huaxiang; Yan, Gangping; Zhang, Zhaohao; Li, Lianlian; Sun, Xiaoting; Chen, Jia; Zhang, Yadong; Bi, Jinshun; Xiang, Jinjuan; Liu, Jinbiao; Wu, Zhenhua; Luo, Jun; Wang, Wenwu
Journal:: Advanced materials interfaces
Issue:: Volume 9:Issue 24(2022)
Page Start:: n/a
Record Type:: Journal Article
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