1. Design principle for a p-type oxide gate layer on AlGaN/GaN toward normally-off HEMTs: Li-doped NiO as a model. Issue 3 (17th December 2019) Authors: Li, Guanjie; Li, Xiaomin; Zhao, Junliang; Yan, Fawang; Zhu, Qiuxiang; Gao, Xiangdong Journal: Journal of materials chemistry Issue: Volume 8:Issue 3(2019) Page Start: 1125 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗