1. Crystallization of silicon–germanium by aluminum-induced layer exchange. (12th January 2018) Authors: Isomura, Masao; Yajima, Masahiro; Nakamura, Isao Journal: Japanese journal of applied physics Issue: Volume 57:Number 2(2018) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗