1. Study of heavy ion induced single event gate rupture effect in SiC MOSFETs. (1st August 2022) Authors: Xiaowen, Liang; Haonan, Feng; Xiaojuan, Pu; Jiangwei, Cui; Jing, Sun; Ying, Wei; Dan, Zhang; Xuefeng, Yu; Qi, Guo Journal: Japanese journal of applied physics Issue: Volume 61:Number 8(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗