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Author/Creator Xia, Yuanyang

2. Investigations of the gate instability characteristics in Schottky/ohmic type p-GaN gate normally-off AlGaN/GaN HEMTs. (13th November 2019)

Authors:
Zeng, Changkun; Xu, Weizong; Xia, Yuanyang; Pan, Danfeng; Wang, Yiwang; Wang, Qiang; Zhu, Youhua; Ren, Fangfang; Zhou, Dong; Ye, Jiandong; Chen, Dunjun; Zhang, Rong; Zheng, Youdou; Lu, Hai
Journal:
Applied physics express
Issue:
Volume 12:Number 12(2019)
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Record Type:
Journal Article
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3. Multi-aperture anode based AlGaN/GaN Schottky barrier diodes with low turn-on voltage and high uniformity. (27th August 2020)

Authors:
Lu, Yu; Zhou, Feng; Xu, Weizong; Wang, Dongsheng; Xia, Yuanyang; Zhu, Youhua; Pan, Danfeng; Ren, Fangfang; Zhou, Dong; Ye, Jiandong; Chen, Dunjun; Zhang, Rong; Zheng, Youdou; Lu, Hai
Journal:
Applied physics express
Issue:
Volume 13:Number 9(2020)
Page Start:
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗