1. Characterization of β-Ga2O3 homoepitaxial films and MOSFETs grown by MOCVD at high growth rates. (28th October 2020) Authors: Tadjer, Marko J; Alema, Fikadu; Osinsky, Andrei; Mastro, Michael A; Nepal, Neeraj; Woodward, Jeffrey M; Myers-Ward, Rachael L; Glaser, Evan R; Freitas, Jaime A; Jacobs, Alan G; Gallagher, James C; Mock, Alyssa L; Pennachio, Daniel J; Hajzus, Jenifer; Ebrish, Mona; Anderson, Travis J; Hobart, Karl... Journal: Journal of physics Issue: Volume 54:Number 3(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Characterization of β-Ga2O3 homoepitaxial films and MOSFETs grown by MOCVD at high growth rates. (28th October 2020) Authors: Tadjer, Marko J; Alema, Fikadu; Osinsky, Andrei; Mastro, Michael A; Nepal, Neeraj; Woodward, Jeffrey M; Myers-Ward, Rachael L; Glaser, Evan R; Freitas, Jaime A; Jacobs, Alan G; Gallagher, James C; Mock, Alyssa L; Pennachio, Daniel J; Hajzus, Jenifer; Ebrish, Mona; Anderson, Travis J; Hobart, Karl... Journal: Journal of physics Issue: Volume 54:Number 3(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗