1. A Combination of a Volatile‐Memristor‐Based True Random‐Number Generator and a Nonlinear‐Feedback Shift Register for High‐Speed Encryption. (5th March 2020) Authors: Woo, Kyung Seok; Wang, Yongmin; Kim, Yumin; Kim, Jihun; Kim, Woohyun; Hwang, Cheol Seong Journal: Advanced Electronic Materials Issue: Volume 6:Number 5(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. A High‐Speed True Random Number Generator Based on a CuxTe1−x Diffusive Memristor. (22nd July 2021) Authors: Woo, Kyung Seok; Kim, Jaehyun; Han, Janguk; Choi, Jin Myung; Kim, Woohyun; Hwang, Cheol Seong Journal: Advanced intelligent systems Issue: Volume 3:Number 7(2021) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. A High‐Speed True Random Number Generator Based on a CuxTe1−x Diffusive Memristor. (23rd June 2021) Authors: Woo, Kyung Seok; Kim, Jaehyun; Han, Janguk; Choi, Jin Myung; Kim, Woohyun; Hwang, Cheol Seong Journal: Advanced intelligent systems Issue: Volume 3:Number 7(2021) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. A True Random Number Generator Using Threshold‐Switching‐Based Memristors in an Efficient Circuit Design. (28th November 2018) Authors: Woo, Kyung Seok; Wang, Yongmin; Kim, Jihun; Kim, Yumin; Kwon, Young Jae; Yoon, Jung Ho; Kim, Woohyun; Hwang, Cheol Seong Journal: Advanced Electronic Materials Issue: Volume 5:Number 2(2019) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Area‐Type Electronic Bipolar Resistive Switching of Pt/Al2O3/Si3N3.0/Ti with Forming‐Free, Self‐Rectification, and Nonlinear Characteristics. Issue 8 (3rd June 2020) Authors: Kwon, Dae Eun; Kim, Jihun; Kwon, Young Jae; Woo, Kyung Seok; Yoon, Jung Ho; Hwang, Cheol Seong Journal: Physica status solidi Issue: Volume 14:Issue 8(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Atomic layer deposition of GeSe films using HGeCl3 and [(CH3)3Si]2Se with the discrete feeding method for the ovonic threshold switch. (2nd July 2018) Authors: Kim, Woohyun; Yoo, Sijung; Yoo, Chanyoung; Park, Eui-Sang; Jeon, Jeongwoo; Kwon, Young Jae; Woo, Kyung Seok; Kim, Han Joon; Lee, Yoon Kyeung; Hwang, Cheol Seong Journal: Nanotechnology Issue: Volume 29:Number 36(2018) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Bipolar resistive switching property of Si3N4−x thin films depending on N deficiency. Issue 5 (2nd January 2020) Authors: Kwon, Dae Eun; Kim, Yumin; Kim, Hae Jin; Kwon, Young Jae; Woo, Kyung Seok; Yoon, Jung Ho; Hwang, Cheol Seong Journal: Journal of materials chemistry Issue: Volume 8:Issue 5(2020) Page Start: 1755 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Graph Analysis with Multifunctional Self‐Rectifying Memristive Crossbar Array. Issue 10 (24th January 2023) Authors: Jang, Yoon Ho; Han, Janguk; Kim, Jihun; Kim, Woohyun; Woo, Kyung Seok; Kim, Jaehyun; Hwang, Cheol Seong Journal: Advanced materials Issue: Volume 35:Issue 10(2023) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Hardware‐Based Security: A Combination of a Volatile‐Memristor‐Based True Random‐Number Generator and a Nonlinear‐Feedback Shift Register for High‐Speed Encryption (Adv. Electron. Mater. 5/2020). (11th May 2020) Authors: Woo, Kyung Seok; Wang, Yongmin; Kim, Yumin; Kim, Jihun; Kim, Woohyun; Hwang, Cheol Seong Journal: Advanced Electronic Materials Issue: Volume 6:Number 5(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗