1. Formation and control of the E2∗ center in implanted β-Ga2O3 by reverse-bias and zero-bias annealing. (20th August 2020) Authors: Zimmermann, C; Førdestrøm Verhoeven, E; Kalmann Frodason, Y; Weiser, P M; Varley, J B; Vines, L Journal: Journal of physics Issue: Volume 53:Number 46(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗