Author/Creator: Wang, Shea-Jue - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Wang, Shea-Jue

1. Characteristics and hot-carrier effects of strained pMOSFETs with SiGe channel and embedded SiGe source/drain stressors. (17th March 2014)

Authors:: Wang, Mu-Chun; Wang, Shea-Jue; Huang, Heng-Sheng; Chen, Shuang-Yuan; Peng, Min-Ru; Ji, Liang-Ru; Lu, Ming-Feng; Liao, Wen-Shiang; Liu, Chuan-Hsi
Journal:: International journal of nanotechnology
Issue:: Volume 11:Number 1/2/3/4(2014)
Page Start:: 62
Record Type:: Journal Article
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2. Effect of nitrogen flow rate on TaN diffusion barrier layer deposited between a Cu layer and a Si-based substrate. Issue 15 (15th October 2017)

Authors:: Chen, Shih-Fan; Wang, Shea-Jue; Yang, Tzu-Hsien; Yang, Zheng-Da; Bor, Hui-Yun; Wei, Chao-Nan
Journal:: Ceramics international
Issue:: Volume 43:Issue 15(2017)
Page Start:: 12505
Record Type:: Journal Article
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3. Electrical stress probing recovery efficiency of 28 nm HK/MG nMOSFETs using decoupled plasma nitridation treatment. (July 2018)

Authors:: Wang, Shea-Jue; Sung, Shun-Ping; Wang, Mu-Chun; Huang, Heng-Sheng; Chen, Shuang-Yuan; Fan, Shou-Kong
Journal:: Vacuum
Issue:: Volume 153(2018)
Page Start:: 117
Record Type:: Journal Article
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4. Heat stress exposing performance of deep-nano HK/MG nMOSFETs using DPN or PDA treatment. Issue 11 (November 2015)

Authors:: Wang, Shea-Jue; Wang, Mu-Chun; Chen, Shuang-Yuan; Lan, Wen-How; Yang, Bor-Wen; Huang, L.S.; Liu, Chuan-Hsi
Journal:: Microelectronics and reliability
Issue:: Volume 55:Issue 11(2015)
Page Start:: 2203
Record Type:: Journal Article
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5. I-V model of nano nMOSFETs incorporating drift and diffusion current. (September 2018)

Authors:: Huang, Heng-Sheng; Wang, Wei-Lun; Wang, Mu-Chun; Chao, Yu-Hao; Wang, Shea-Jue; Chen, Shuang-Yuan
Journal:: Vacuum
Issue:: Volume 155(2018)
Page Start:: 76
Record Type:: Journal Article
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6. Punch-through and junction breakdown characteristics for uniaxial strained nano-node metal-oxide-semiconductor field-effect transistors on (100) wafers. (1st January 2014)

Authors:: Wang, Mu-Chun; Huang, Heng-Sheng; Peng, Min-Ru; Wang, Shea-Jue; Chen, Tsao-Yeh; Liao, Wen-Shiang; Yang, Hsin-Chia; Liu, Chuan-Hsi
Journal:: International journal of material & product technology
Issue:: Volume 49:Number 1(2014)
Page Start:: 25
Record Type:: Journal Article
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7. Thermal stress probing the channel-length modulation effect of nano n-type FinFETs. (April 2018)

Authors:: Tuan, Fu-Yuan; Chen, Chii-Wen; Wang, Mu-Chun; Liao, Wen-Shiang; Wang, Shea-Jue; Fan, Shou-Kong; Lan, Wen-How
Journal:: Microelectronics and reliability
Issue:: Volume 83(2018)
Page Start:: 260
Record Type:: Journal Article
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