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Author/Creator Wang, Ruxian

4. The Hidden Potential of Polysilsesquioxane for High‐k: Analysis of the Origin of its Dielectric Nature and Practical Low‐Voltage‐Operating Applications beyond the Unit Device (Adv. Funct. Mater. 7/2022). (8th February 2022)

Authors:
Ye, Heqing; Kwon, Hyeok‐jin; Shin, Su Cheol; Lee, Hwi‐young; Park, Young Ho; Tang, Xiaowu; Wang, Ruxian; Lee, Kanghyuck; Hong, Jisu; Li, Zhijun; Jeong, Wonkyo; Kim, Jiyeong; Park, Chan Eon; Lee, Jihoon; An, Tae Kyu; In, Insik; Kim, Se Hyun
Journal:
Advanced functional materials
Issue:
Volume 32:Number 7(2022)
Page Start:
n/a
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗

5. The Hidden Potential of Polysilsesquioxane for High‐k: Analysis of the Origin of its Dielectric Nature and Practical Low‐Voltage‐Operating Applications beyond the Unit Device. (19th October 2021)

Authors:
Ye, Heqing; Kwon, Hyeok‐jin; Shin, Su Cheol; Lee, Hwi‐young; Park, Young Ho; Tang, Xiaowu; Wang, Ruxian; Lee, Kanghyuck; Hong, Jisu; Li, Zhijun; Jeong, Wonkyo; Kim, Jiyeong; Park, Chan Eon; Lee, Jihoon; An, Tae Kyu; In, Insik; Kim, Se Hyun
Journal:
Advanced functional materials
Issue:
Volume 32:Number 7(2022)
Page Start:
n/a
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗