1. Double Shockley Stacking Fault Formation in Higher Doping Regions of PVT-Grown 4H-SiC Wafers. (21st September 2015) Authors: Yang, Yu; Guo, Jianqiu; Goue, Ouloide Yannick; Wang, H; Wu, F; Raghothamachar, Balaji; Dudley, Michael; Chung, G; Quast, J; Sanchez, E; Manning, I; Hansen, Darren Journal: ECS transactions Issue: Volume 69:Number 11(2015) Page Start: 39 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗