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Author/Creator Wang, Chin-I.

1. Leakage current lowering and film densification of ZrO2 high-k gate dielectrics by layer-by-layer, in-situ atomic layer hydrogen bombardment. (April 2020)

Authors:
Huang, Kuei-Wen; Chang, Teng-Jan; Wang, Chun-Yuan; Yi, Sheng-Han; Wang, Chin-I.; Jiang, Yu-Sen; Yin, Yu-Tung; Lin, Hsin-Chih; Chen, Miin-Jang
Journal:
Materials science in semiconductor processing
Issue:
Volume 109(2020)
Page Start:
Record Type:
Journal Article
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2. Operation bandwidth of negative capacitance characterized by the frequency response of capacitance magnification in ferroelectric/dielectric stacks. Issue 4 (5th January 2021)

Authors:
Jiang, Yu-Sen; Jeng, Yu-En; Yin, Yu-Tung; Huang, Kuei-Wen; Chang, Teng-Jan; Wang, Chin-I.; Chao, Yu-Ting; Wu, Chao-Hsin; Chen, Miin-Jang
Journal:
Journal of materials chemistry
Issue:
Volume 9:Issue 4(2021)
Page Start:
1401
Record Type:
Journal Article
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3. Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices. Issue 2 (2nd January 2019)

Authors:
Wang, Chin-I.; Chang, Teng-Jan; Wang, Chun-Yuan; Yin, Yu-Tung; Shyue, Jing-Jong; Lin, Hsin-Chih; Chen, Miin-Jang
Journal:
RSC advances
Issue:
Volume 9:Issue 2(2019)
Page Start:
592
Record Type:
Journal Article
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Available online (eLD content is only available in our Reading Rooms) ↗