1. Effect of In3+ doping on electroluminescence from MgZnO:In3+/ZnO:Er3+/n-Si LEDs. (9th May 2017) Authors: Huang, Miaoling; Wang, Shenwei; Yin, Xue; Mu, Guangyao; Wan, Guangmiao; Duan, Xiaoxia; Yi, Lixin Journal: Journal of physics Issue: Volume 50:Number 21(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Enhanced electrical stability of thin film transistors based on nanocrystalline silicon films. (1st March 2023) Authors: Xu, Hongyuan; Wan, Guangmiao; Mai, Jiaying; Jiang, Zhixiong; Liu, Bin; Zhang, Shengdong Journal: Semiconductor science and technology Issue: Volume 38:Number 3(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Observation of red electroluminescence from an Eu2O3/p+-Si device and improved performance by introducing a Tb2O3 layer. (10th February 2017) Authors: Yin, Xue; Wang, Shenwei; Mu, Guangyao; Wan, Guangmiao; Huang, Miaoling; Yi, Lixin Journal: Journal of physics Issue: Volume 50:Number 10(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Red electroluminescence from Tb2O3: Eu/PEDOT: PSS heterojunction light-emitting diodes. (October 2020) Authors: Wan, Guangmiao; Wang, Shenwei; Li, Ling; Yin, Xue; Mu, Guangyao; Yi, Lixin Journal: Journal of physics Issue: Volume 1639(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗