1. Modeling boron dose loss in sidewall spacer stacks of complementary metal oxide semiconductor transistors. (December 2016) Authors: Essa, Z.; Pelletier, B.; Morin, P.; Boulenc, P.; Pakfar, A.; Tavernier, C.; Wacquant, F.; Zechner, C.; Juhel, M.; Autran, J.L.; Cristiano, F. Journal: Solid-state electronics Issue: Volume 126(2016) Page Start: 163 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Modeling boron dose loss in sidewall spacer stacks of complementary metal oxide semiconductor transistors. (December 2016) Authors: Essa, Z.; Pelletier, B.; Morin, P.; Boulenc, P.; Pakfar, A.; Tavernier, C.; Wacquant, F.; Zechner, C.; Juhel, M.; Autran, J.L.; Cristiano, F. Journal: Solid-state electronics Issue: Volume 126(2016) Page Start: 163 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗