1. Ex situ n+ doping of GeSn alloys via non-equilibrium processing. (8th May 2018) Authors: Prucnal, S; Berencén, Y; Wang, M; Rebohle, L; Böttger, R; Fischer, I A; Augel, L; Oehme, M; Schulze, J; Voelskow, M; Helm, M; Skorupa, W; Zhou, S Journal: Semiconductor science and technology Issue: Volume 33:Number 6(2018:Jun.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. In situ ohmic contact formation for n-type Ge via non-equilibrium processing. (4th October 2017) Authors: Prucnal, S; Frigerio, J; Napolitani, E; Ballabio, A; Berencén, Y; Rebohle, L; Wang, M; Böttger, R; Voelskow, M; Isella, G; Hübner, R; Helm, M; Zhou, S; Skorupa, W Journal: Semiconductor science and technology Issue: Volume 32:Number 11(2017:Nov.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗