1. Comparison between nMOS and pMOS Ω-gate nanowire down to 10 nm width as a function of back gate bias. (30th January 2019) Authors: Itocazu, V T; Almeida, L M; Sonnenberg, V; Agopian, P G D; Barraud, S; Vinet, M; Faynot, O; Martino, J A Journal: Semiconductor science and technology Issue: Volume 34:Number 3(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Superconducting routing platform for large-scale integration of quantum technologies. (1st September 2022) Authors: Thomas, C; Michel, J-P; Deschaseaux, E; Charbonnier, J; Souil, R; Vermande, E; Campo, A; Farjot, T; Rodriguez, G; Romano, G; Gustavo, F; Jadot, B; Thiney, V; Thonnart, Y; Billiot, G; Meunier, T; Vinet, M Journal: Materials for quantum technology Issue: Volume 2:Number 3(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. The coupled atom transistor. (18th March 2015) Authors: Jehl, X; Voisin, B; Roche, B; Dupont-Ferrier, E; De Franceschi, S; Sanquer, M; Cobian, M; Niquet, Y-M; Sklénard, B; Cueto, O; Wacquez, R; Vinet, M Journal: Journal of physics Issue: Volume 27:Number 15(2015) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗