1. Growth‐Related Formation Mechanism of I3‐Type Basal Stacking Fault in Epitaxially Grown Hexagonal Ge‐2H. Issue 16 (4th May 2022) Authors: Vincent, Laetitia; Fadaly, Elham M. T.; Renard, Charles; Peeters, Wouter H. J.; Vettori, Marco; Panciera, Federico; Bouchier, Daniel; Bakkers, Erik P. A. M; Verheijen, Marcel A. Journal: Advanced materials interfaces Issue: Volume 9:Issue 16(2022) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Impact of the Ga flux incidence angle on the growth kinetics of self-assisted GaAs nanowires on Si(111). Issue 11 (15th October 2019) Authors: Vettori, Marco; Danescu, Alexandre; Guan, Xin; Regreny, Philippe; Penuelas, José; Gendry, Michel Journal: Nanoscale advances Issue: Volume 1:Issue 11(2019) Page Start: 4433 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Nanoscale investigation of a radial p–n junction in self-catalyzed GaAs nanowires grown on Si (111). Issue 43 (24th October 2018) Authors: Piazza, Valerio; Vettori, Marco; Ahmed, Ahmed Ali; Lavenus, Pierre; Bayle, Fabien; Chauvin, Nicolas; Julien, François H.; Regreny, Philippe; Patriarche, Gilles; Fave, Alain; Gendry, Michel; Tchernycheva, Maria Journal: Nanoscale Issue: Volume 10:Issue 43(2018) Page Start: 20207 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗