1. Influence of Doping and Tunneling Interface Stoichiometry on n+In0.5Ga0.5As/p+GaAs0.5Sb0.5 Esaki Diode Behavior. (25th April 2016) Authors: El Kazzi, Salim; Alireza, A; Bordallo, Caio Cesar Mendes; Smets, Quentin; Desplanque, Ludovic; Wallart, Xavier; Richard, Olivier; Douhard, Bastien; Verhulst, Anne; Collaert, Nadine; Merckling, Clement; Heyns, Marc; Thean, Aaron Journal: ECS transactions Issue: Volume 72:Number 3(2016) Page Start: 73 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗