1. Understanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stress. (8th January 2020) Authors: Fiorenza, P; Alessandrino, M S; Carbone, B; Di Martino, C; Russo, A; Saggio, M; Venuto, C; Zanetti, E; Giannazzo, F; Roccaforte, F Journal: Nanotechnology Issue: Volume 31:Number 12(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗