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Author/Creator Velessiotis, D.

1. Phosphorous Diffusion in N2+-Implanted Germanium during Flash Lamp Annealing: Influence of Nitrogen on Ge Substrate Damage and Capping Layer Engineering. (1st January 2017)

Authors:
Skarlatos, D.; Ioannou-Sougleridis, V.; Barozzi, M.; Pepponi, G.; Velessiotis, D.; Skoulikidou, M. C.; Vouroutzis, N. Z.; Papagelis, K.; Dimitrakis, P.; Thomidis, C.; Colombeau, B.
Journal:
ECS journal of solid state science and technology
Issue:
Volume 6:Number 7(2017)
Page Start:
P418
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗

2. Phosphorous Diffusion in N2+-Implanted Germanium during Flash Lamp Annealing: Influence of Nitrogen on Ge Substrate Damage and Capping Layer Engineering. (25th May 2017)

Authors:
Skarlatos, D.; Ioannou-Sougleridis, V.; Barozzi, M.; Pepponi, G.; Velessiotis, D.; Skoulikidou, M. C.; Vouroutzis, N. Z.; Papagelis, K.; Dimitrakis, P.; Thomidis, C.; Colombeau, B.
Journal:
ECS journal of solid state science and technology
Issue:
Volume 6:Number 7(2017)
Page Start:
P418
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗