1. 200 mm Ge Wafer Production for Oxide-Free Si-Ge Direct Wafer Bonding. (8th September 2020) Authors: Rebhan, Bernhard; Vanpaemel, Johannes; Dragoi, Viorel Journal: ECS transactions Issue: Volume 98:Number 4(2020) Page Start: 87 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗