1. In situ UHVEM irradiation study of intrinsic point defect behavior in Si nanowire structures. Issue 3 (9th February 2015) Authors: Vanhellemont, J.; Anada, S.; Nagase, T.; Yasuda, H.; Bender, H.; Rooyackers, R.; Vandooren, A. Journal: Physica status solidi Issue: Volume 12:Issue 3(2015:Mar.) Page Start: 275 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. The impact of the temperature on In0.53Ga0.47As nTFETs. (2018) Authors: Bordallo, C.; Martino, J. A.; Agopian, P. G. D.; Alian, A.; Mols, Y.; Rooyackers, R.; Vandooren, A.; Verhulst, A.; Mocuta, D.; Lin, D.; Simoen, E.; Claeys, C.; Collaert, N. Journal: Composants nanoélectroniques = Issue: Volume 1(2018) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗