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Author/Creator Urano, Shun

1. Evidence of reduced interface states in Al2O3/AlGaN MIS structures via insertion of ex situ regrown AlGaN layer. (22nd September 2022)

Authors:
Baratov, Ali; Kawabata, Shinsaku; Urano, Shun; Nagase, Itsuki; Ishiguro, Masaki; Maeda, Shogo; Igarashi, Takahiro; Nezu, Toi; Yatabe, Zenji; Matys, Maciej; Kachi, Tetsu; Adamowicz, Boguslawa; Wakejima, Akio; Kuzuhara, Masaaki; Yamamoto, Akio; Asubar, Joel T.
Journal:
Applied physics express
Issue:
Volume 15:Number 10(2022)
Page Start:
Record Type:
Journal Article
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2. GaN-based MIS-HEMTs with Al2O3 dielectric deposited by low-cost and environmental-friendly mist-CVD technique. (16th February 2021)

Authors:
Low, Rui Shan; Asubar, Joel T.; Baratov, Ali; Kamiya, Shunsuke; Nagase, Itsuki; Urano, Shun; Kawabata, Shinsaku; Tokuda, Hirokuni; Kuzuhara, Masaaki; Nakamura, Yusui; Naito, Kenta; Motoyama, Tomohiro; Yatabe, Zenji
Journal:
Applied physics express
Issue:
Volume 14:Number 3(2021)
Page Start:
Record Type:
Journal Article
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Available online (eLD content is only available in our Reading Rooms) ↗

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