1. Impact of SiN passivation film stress on electroluminescence characteristics of AlGaN/GaN high-electron-mobility transistors. (2nd September 2021) Authors: Ma, Qiang; Urano, Shiyo; Ando, Yuji; Tanaka, Atsushi; Wakejima, Akio Journal: Applied physics express Issue: Volume 14:Number 9(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗