Author/Creator: Upadhyay, Pankaj - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Upadhyay, Pankaj

1. Improved Mg Dopant Activation in p‐GaN and Enhanced Electroluminescence in InGaN/GaN LEDs by Plasma Immersion Ion Implantation of Phosphorus. Issue 18 (25th June 2018)

Authors:: Upadhyay, Pankaj; Saha, Dipankar
Journal:: Physica status solidi
Issue:: Volume 215:Issue 18(2018)
Page Start:: n/a
Record Type:: Journal Article
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2. Improved Ohmic contact to GaN and AlGaN/GaN two‐dimensional electron gas using trap assisted tunneling by B implantation. Issue 5 (20th March 2015)

Authors:: Upadhyay, Pankaj; Meer, Mudassar; Takhar, Kuldeep; Khachariya, Dolar; Kumar S, Akhil; Banerjee, Debashree; Ganguly, Swaroop; Laha, Apurba; Saha, Dipankar
Journal:: Physica status solidi
Issue:: Volume 252:Issue 5(2015:May)
Page Start:: 989
Record Type:: Journal Article
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3. Source extension region scaling for AlGaN/GaN high electron mobility transistors using non-alloyed ohmic contacts. (August 2016)

Authors:: Takhar, Kuldeep; Akhil Kumar, S; Meer, Mudassar; Upadhyay, Bhanu B.; Upadhyay, Pankaj; Khachariya, Dolar; Ganguly, Swaroop; Saha, Dipankar
Journal:: Solid-state electronics
Issue:: Volume 122(2016)
Page Start:: 70
Record Type:: Journal Article
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4. Source extension region scaling for AlGaN/GaN high electron mobility transistors using non-alloyed ohmic contacts. (August 2016)

Authors:: Takhar, Kuldeep; Akhil Kumar, S; Meer, Mudassar; Upadhyay, Bhanu B.; Upadhyay, Pankaj; Khachariya, Dolar; Ganguly, Swaroop; Saha, Dipankar
Journal:: Solid-state electronics
Issue:: Volume 122(2016)
Page Start:: 70
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗