1. Characteristic Change of GeO2/Ge Interface by Hf-Post Metallization Annealing. (9th April 2018) Authors: Fujiwara, Haruka; Iwazaki, Yoshitaka; Ueno, Tomo Journal: ECS transactions Issue: Volume 85:Number 6(2018) Page Start: 43 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Investigation of High Current Tetracene-TFT Using Surface Nitrided SiO2 Gate Insulator Film. (18th August 2016) Authors: Nakao, Hiroki; Hori, Kabuto; Iwazaki, Yoshitaka; Ueno, Tomo Journal: ECS transactions Issue: Volume 75:Number 10(2016) Page Start: 81 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. The Improvement of GeO2 Film Characteristics on Ge Substrates Using Ultrathin Hf Metal Deposition Followed by Annealing. (18th August 2016) Authors: Ueno, Tomo; Niida, Jun-pei; Yamaguchi, Marina; Iwazaki, Yoshitaka Journal: ECS transactions Issue: Volume 75:Number 8(2016) Page Start: 675 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗